HBM3E High-Bandwidth Memory | QS Compute

Micron HBM3E 12-High — 36GB High-Bandwidth Memory

Micron HBM3E 12-high: 36GB capacity, >1.2 TB/s bandwidth, >9.2 Gbps pin speed, 1,024 I/O pins. Programmable MBIST for full-speed test coverage. CoWoS-c...

Samsung HBM3E 12H — 36GB High-Bandwidth Memory

Samsung HBM3E 12H: industry-first 12-stack HBM3E DRAM with 36GB capacity and up to 1,280 GB/s bandwidth. Thermal-compression NCF keeps 12-layer stack the sam...

2048-bit HBM4 stacks above 2.8 TB/s, 36GB 12-high and 48GB 16-high, customizable base die.

Micron HBM4 36 GB 12-High

2,048-bit interface at >11 Gb/s per pin for >2.8 TB/s per stack — 2.3× HBM3E, in volume production for NVIDIA Vera Rubin.

SK hynix cHBM — Custom Base Die HBM

HBM with a customer-defined logic base die: HBM PHY, memory controllers and die-to-die interfaces move off the accelerator die.

Custom base die

SPHBM4 — Standard Package High Bandwidth Memory (JESD330-4)

JEDEC JESD330-4 (July 2026): HBM4 DRAM stacks on a 512-bit external interface. HBM4-class bandwidth on standard organic substrates with no silicon interposer.

Samsung HBM3 — 24 GB 12-Hi High-Bandwidth Memory

Third-generation HBM at 6.4 Gbps per pin and up to 819 GB/s per stack, in 16 GB 8-Hi and 24 GB 12-Hi stacks built from 10 nm-class 16 Gb DRAM dies.

Samsung zHBM — HBM Stacked on the Accelerator

Z-axis HBM architecture stacking memory above the AI accelerator; ~8x HBM5 performance and >10x density.

Cadence HBM4/4E PHY & Controller IP

12.8 Gbps HBM4/4E PHY + controller IP: hardened TSMC N3/N2 PHY, soft-RTL controller, 32-channel testchip.

GUC HBM4 PHY & Controller IP

3nm HBM4 PHY + Controller on TSMC CoWoS: 12 Gbps, 2.5x bandwidth vs HBM3E, proteanTecs monitoring.

Rambus HBM4 Controller IP

Industry-first HBM4 memory controller IP: JEDEC 6.4 Gbps up to 10 Gbps, 2.56 TB/s per device, DFI-compatible.

Synopsys HBM4/4E PHY & Controller IP

Synopsys DesignWare HBM4/4E PHY and Controller IP — up to 12 Gbps per pin, >3 TBps interface bandwidth, JEDEC HBM4/4E controller; world-first HBM4 test chip at 9.2 Gbps.

Marvell 64 Gbps Die-to-Die Interface IP

Marvell bi-directional 64 Gbps D2D interface IP (2nm/3nm) — >30 Tbps/mm bandwidth density, adaptive power, plus a 3nm 40 Gbps HBM-to-compute die link.

All 28 Models

Complete list of HBM3E High-Bandwidth Memory — click any model for full specifications, pricing, and official manufacturer part numbers (MPN).

Micron HBM3E 12-High — 36GB High-Bandwidth Memory Micron HBM4 — 36GB 12-High & 48GB 16-High Samsung HBM3E 12H — 36GB High-Bandwidth Memory Samsung HBM4E 12-High — 48GB AI Memory SK hynix HBM4 16-High — 48GB High-Bandwidth Memory Micron HBM3E 8-High 24GB Stack — 1.2 TB/s AI Memory SK hynix HBM3E 12-High 36GB Stack — 9.6 Gbps SK hynix HBM3E 8-High 24GB Stack — H100/H200 Memory SK hynix HBM4E 48GB 12-Hi High Bandwidth Memory — 16 Gbps per Pin SK hynix HBM4 36GB 12-Hi High Bandwidth Memory — 11.7 Gbps per Pin Micron HBM4 36GB 12-Hi High Bandwidth Memory — 2048-bit Interface Samsung HBM4 12-Hi 48GB — Next-Generation AI Memory Stack Samsung HBM4E 12-Layer 48GB — 3.6 TB/s AI Memory Stack SK hynix HBM4E 12-Hi 48GB — 16 Gbps MR-MUF AI Memory Micron HBM4 16-Hi 48GB — 16-Die AI Memory Stack SK hynix HBM3E 16-Hi 48GB — Highest-Density Third-Generation HBM Samsung HBM3E 8-Hi 24GB — Shinebolt High Bandwidth Memory Micron HBM4E — Customizable Base Die HBM for AI GPUs Micron HBM4 36 GB 12-Hi — 2,048-Bit, >2.8 TB/s Stack Memory SK hynix cHBM — Custom Base Die HBM with Embedded Logic SPHBM4 — Standard Package High Bandwidth Memory (JEDEC JESD330-4) Samsung HBM3 — 24 GB 12-Hi High-Bandwidth Memory at 819 GB/s Samsung zHBM — 3D-Stacked HBM-on-Accelerator Memory Cadence HBM4/4E PHY & Controller IP GUC HBM4 PHY & Controller IP Rambus HBM4 Controller IP Synopsys HBM4/4E PHY & Controller IP Marvell 64 Gbps Die-to-Die Interface IP — HBM & Chiplet