Samsung HBM3E 8-Hi 24GB — Shinebolt High Bandwidth Memory

Specifications

Overview

Samsung HBM3E 8-Hi is the 24 GB-per-stack configuration of the third-generation High Bandwidth Memory standard, sold under the Shinebolt product name. Eight DRAM die stack onto a buffer base die to deliver 24 GB with a 1024-bit interface and 1.2 TB/s of bandwidth per stack.

The packaging technology is TC-NCF — thermal compression with non-conductive film. A non-conductive film layer is applied between each die, which improves heat transfer through the stack while keeping the die electrically isolated. That thermal path is a meaningful constraint on HBM, since the memory stack sits beside the compute die under the same lid.

8-Hi HBM3E is the entry capacity point of the HBM3E family. Systems that scale by number of stacks rather than stack capacity use it to hit a memory target with a better thermal profile than a 12-Hi or 16-Hi part.

Key Benefits

Better thermal path — 8-die stacks are easier to cool than 12-Hi or 16-Hi parts. 1.2 TB/s per stack — full HBM3E bandwidth at the entry capacity point. Volume availability — mature 8-Hi manufacturing.

Applications

AI accelerator packages with lower per-stack memory requirements, HPC clusters, GPU servers that scale memory by stack count, and thermal-limited systems where an 8-Hi stack is preferred over a taller one.

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