Specifications
Capacity
48GB (12-High); up to 64GB (16-High)
Bandwidth
3.6 TB/s per stack (up to 4 TB/s)
Pin Speed
14 Gbps stable, up to 16 Gbps
I/O Interface
2,048-bit
Process
1c DRAM + 4nm logic base die
Lineup
32GB (8-High) / 48GB (12-High) / 64GB (16-High)
Status
Sampling (industry-first HBM4E)
Overview
Samsung HBM4E is the industry's first sixth-generation-plus high-bandwidth memory to ship samples. The 12-layer stack delivers 48GB — more than 30% above the 36GB HBM4 baseline — with a stable 14 Gbps pin speed scaling to 16 Gbps, roughly 20% faster than HBM4 and good for up to 3.6 TB/s per stack.
Built on Samsung's 1c DRAM node with a 4nm foundry-based logic base die, HBM4E targets large-language-model training and inference, hyperscale data centers, and next-generation AI accelerators. Samsung plans to extend the family to 32GB (8-high) and 64GB (16-high, up to 4 TB/s) configurations. QS Compute supplies Samsung HBM4E for accelerator and CoWoS packaging programs.
Request a Quote — Samsung HBM4E 12-High 48GB
QS Compute — Global B2B AI computing hardware supply, 15-day sample lead time. Price available on quote; stock available to order.
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