Specifications
Series
SK hynix HBM4E
Stack Height
12-Hi (12-high)
Capacity
48 GB per stack
Pin Speed
Up to 16 Gbps per pin
Power Efficiency
More than 20% better than HBM4
Heat Resistance
17% improvement over HBM4
Packaging
Advanced MR-MUF (Mass Reflow Molded Underfill)
Sample Shipment
18 June 2026 to major customers
Mass Production
2027
Public Preview
Computex 2026
Base Die
1c DRAM with TSMC 3nm logic die
Package Integrity
MR-MUF moulding material injected between stacked die
Prior Generations
HBM3, HBM3E, HBM4 manufacturing and packaging heritage
Target Platforms
NVIDIA Rubin era accelerators and hyperscaler AI training systems
Overview
SK hynix HBM4E is the 12-high, 48 GB per stack follow-on to HBM4. Samples shipped to major customers on 18 June 2026, on schedule against the company's published AI memory roadmap.
The design leans on the Advanced MR-MUF packaging process SK hynix has used across HBM3, HBM3E and HBM4. MR-MUF injects a liquid moulding material between the stacked die and then cures it, which protects the internal circuitry and reinforces the stack mechanically. On HBM4E this is what allows a 48 GB 12-high stack to hold package integrity while per-pin signalling rises to 16 Gbps.
The generational gains are quoted as more than 20% better power efficiency and 17% better heat resistance than HBM4 — both meaningful for accelerator packages where the memory stack is one of the hardest components to cool.
Key Benefits
16 Gbps per pin — the highest published HBM4E pin speed. MR-MUF packaging — proven stack reinforcement from three prior HBM generations. Better thermals — 17% improved heat resistance versus HBM4.
Applications
AI training and inference accelerators requiring 48 GB memory stacks, hyperscale AI clusters, next-generation GPU packages, and high-performance computing systems with aggressive per-package memory bandwidth targets.
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