Specifications
Vendor
SK hynix
Product
HBM4E
Capacity per Stack
48 GB
Stack Height
12-Hi
Interface Width
2048-bit
Pin Transfer Rate
Up to 16 Gbps
Stack Bandwidth
Approximately 4.0 TB/s per stack (vendor figure)
Die Density Improvement
1.5x generation-on-generation
Core Process
1c DRAM with TSMC 3 nm logic substrate
Voltage
1.2 V
Status
Sampling / previewed; volume production following HBM4 ramp
Application
Next-generation AI accelerators and HPC GPUs
HBM4E vs HBM4: what the E adds
HBM4 moved the interface to 2048 bits and put a logic base die under the stack; HBM4E keeps that architecture and raises the pin rate. SK hynix quotes up to 16 Gbps per pin on a 2048-bit interface, which lands at roughly 4.0 TB/s per stack against about 2.0 TB/s for standard-rate HBM4 — the same 48 GB capacity, doubled bandwidth. Samsung quotes a comparable 3.6 TB/s figure for its HBM4E, so the two vendors are within a generation of each other on paper.
For accelerator designers the practical consequence is that memory bandwidth stops being the binding constraint on large-model inference and the compute-memory balance shifts. It is also why the silicon base die matters: HBM4E puts a logic substrate under the DRAM stack that can host memory controllers and PHY, so customers can embed functions directly in the memory stack rather than only in the accelerator die. Volume availability tracks the HBM4 ramp programme rather than being separately scheduled.
SK hynix products are supplied by QS Compute with B2B pricing, global shipping and short sample lead times for AI data center, edge deployment and industrial integration projects.
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