Specifications
Series
SK hynix HBM3E
Stack Height
16-Hi (16-layer)
Capacity
48 GB per stack
Pin Speed
Up to 9.6 Gbps per pin
Per-Stack Bandwidth
1.2 TB/s class
Packaging
Advanced MR-MUF (Mass Reflow Molded Underfill)
Generation
3rd-generation High Bandwidth Memory (extended stack)
Target Platform
NVIDIA Blackwell (B200 / B300 class)
Interface Width
1024-bit
Voltage
1.2 V
Comparison
Doubles the 24 GB capacity of 8-Hi HBM3E at the same footprint
Production Status
Volume production
Thermal
MR-MUF moulding between die improves heat dissipation
Demand Driver
NVIDIA increased HBM3E orders while Blackwell demand remains strong
Overview
HBM3E 16-Hi is the maximum-density configuration of the third-generation High Bandwidth Memory standard. Stacking 16 die instead of 8 doubles capacity per stack to 48 GB without changing the package footprint, which lets a Blackwell-class accelerator reach far higher per-package memory with the same number of HBM sites.
SK hynix uses Advanced MR-MUF packaging for the 16-Hi part. The process injects a liquid moulding material between the stacked die and cures it — this is what allows a 16-die stack to survive the mechanical and thermal load of an accelerator package, where warpage and heat are the two limits on stack height.
Commercially, HBM3E remains SK hynix's primary production focus through at least the first half of 2026, because NVIDIA increased HBM3E orders to keep Blackwell GPU supply up while HBM4 ramps.
Key Benefits
48 GB per stack — double the capacity of 8-Hi HBM3E in the same footprint. Proven packaging — MR-MUF validated at 16-die stack height. Volume supply — in production against live Blackwell demand.
Applications
NVIDIA Blackwell-class training and inference accelerators, AI server memory expansion, HPC systems requiring maximum memory per package, and platforms that need HBM3E capacity before HBM4 volume is available.
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