Specifications
Series
Micron 9650
Form Factor
E3.S
Capacity
30.72 TB (family maximum)
Interface
PCIe Gen6 x4, NVMe 2.0
Sequential Read
Up to 28,000 MB/s
Sequential Write
Up to 14,000 MB/s
Random Read
Up to 5.5 MIOPS
Random Write
Up to 900 KIOPS
NAND
Micron G9 TLC NAND (first 9th-generation NAND in a data center SSD)
Architecture
Vertically integrated — Micron controller, NAND, ASIC and firmware
Generational Gain
2x sequential read and 61% random read over PCIe Gen5
Efficiency
Up to 1,120 MB/s per watt
Power
Up to 18 W
Reliability
MTTF 2.5 million hours, 5-year warranty
Form Factors
E1.S (liquid-cooling ready) and E3.S
Use Case
Feeding GPU clusters; RAG and long-context inference pipelines
Overview
The Micron 9650 E3.S at 30.72 TB pairs the family's maximum capacity with the first PCIe Gen6 data center interface in production. Gen6 uses PAM4 signalling to double per-lane bandwidth, so a four-lane drive reaches 28 GB/s of sequential read — the practical ceiling for an x4 link at this generation.
Micron built the drive vertically: its own controller, G9 NAND, ASIC and firmware. G9 is the first ninth-generation NAND to ship in a data center SSD and is configured with a six-plane architecture to keep the internal NAND bus from becoming the bottleneck behind the Gen6 host interface.
At 30.72 TB in E3.S, the drive is aimed squarely at AI training clusters and long-context inference deployments. High capacity plus high throughput reduces the number of drives and backplane lanes needed per node, while the quoted 1,120 MB/s per watt keeps the storage tier from eating the rack power budget.
Key Benefits
30.72 TB — maximum capacity in the 9650 family. First PCIe Gen6 SSD — 28 GB/s reads in production silicon. Vertically integrated — Micron controller, G9 NAND, ASIC and firmware.
Applications
AI training cluster storage tiers, large-context inference and RAG pipelines, GPU-adjacent scratch volumes, Gen6 EDSFF servers, and hyperscale AI storage fleets where throughput per watt is the primary constraint.
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