Specifications
Architecture
800 VDC high-voltage DC distribution for AI data-center racks, selected for NVIDIA's next-generation power ecosystem
Device technologies
GaNFast GaN power ICs and GeneSiC silicon-carbide devices across the conversion chain
Copper reduction
800 VDC distribution reduces copper usage and resistive losses compared with lower-voltage AC or 48 V-only designs
Rack scale
Designed to deliver megawatt-scale rack power with compact, scalable power shelves
3.2 kW CRPS
High-speed, high-efficiency GaN CRPS supply achieving a 40% smaller size than legacy silicon solutions
4.5 kW class
Highest power density CRPS-class supply in the Navitas portfolio for power-hungry AI and edge computing
Secondary conversion
Medium-voltage GaN devices (80-120 V) for 48-54 V output DC-DC stages, optimised for speed and space
Efficiency impact
Ultra-low switching and conduction losses cut electricity wasted as heat versus traditional silicon
Cooling
Lower losses reduce cooling load and maintenance cost at rack and row level
Front-end role
HV IBC / AC-DC conversion from 800 VDC distribution down to the rack's intermediate bus
Form factors
CRPS and OCP-style power shelf modules for hyperscale and enterprise AI racks
Thermal
Wide-bandgap devices tolerate higher switching frequency and temperature than silicon MOSFETs
Standards alignment
Supports OCP-style 800 VDC and 48 V rack power architectures
Targets
AI training and inference racks, GGU-dense servers, edge AI computing and HPC clusters
Overview
Navitas addresses the power bottleneck in AI racks with wide-bandgap semiconductors — GaNFast gallium-nitride power ICs and GeneSiC silicon-carbide devices — arranged around an 800 VDC high-voltage distribution architecture. The company was selected into NVIDIA's next-generation 800 V HVDC data-center power ecosystem, a signal that wide-bandgap conversion is being designed into rack-level power rather than only into end supplies.
Moving to 800 VDC distribution cuts copper usage and resistive losses while enabling megawatt-scale rack power in a compact, scalable form factor. Navitas pairs that with front-end supplies: a 3.2 kW GaN CRPS that is 40% smaller than equivalent legacy silicon designs, and a 4.5 kW class supply built for the highest power density in the portfolio.
On the secondary side, medium-voltage GaN devices rated 80-120 V handle 48-54 V output conversion for the boards and accelerators inside the rack, optimised for switching speed and space efficiency. Because GaN and SiC switch faster with lower conduction losses than silicon MOSFETs, the whole chain runs cooler — reducing both electricity lost as heat and the cooling capacity required to remove it.
Key Benefits
800 VDC distribution halves copper demand and cuts I2R losses against conventional rack power, which is what makes megawatt-scale AI racks practical. GaN and SiC across the full chain — from front-end CRPS supplies down to medium-voltage 48-54 V DC-DC stages — improves end-to-end efficiency and shrinks footprint, with the 3.2 kW GaN CRPS 40% smaller than legacy silicon equivalents. Lower losses reduce cooling load and maintenance cost, and alignment with OCP-style 800 VDC architectures positions designs for NVIDIA-generation racks.
Applications
AI training and inference racks moving to 800 VDC distribution; GPU-dense servers with multi-kilowatt per-rack power draw; OCP-style power shelves; 48-54 V secondary conversion inside AI servers; HPC clusters; and edge AI computing systems requiring efficient high-density power supplies.
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