Specifications

The DRAM-less 3ME4 is a deliberate industrial choice

The 3ME4 carries no external DRAM buffer. For a consumer drive that would be a cost compromise; for an industrial drive it is the point. Removing the DRAM eliminates the charge held in a volatile buffer at power loss, which removes the need for a capacitor-based power-loss-protection circuit — and capacitors are the component most likely to age out of specification in a machine that runs for fifteen years. Innodisk's L3 firmware architecture pairs the DRAM-less design with an LDPC ECC engine and 4K mapping to recover the random-performance loss the missing buffer would otherwise cost.

The 256 GB industrial-grade build (DEMSR-B56M41BW1DC) is rated for -40 degC to +85 degC operation, which covers outdoor kiosks, unheated cabinets and vehicle-mounted controllers. The 416 TB maximum TBW at 3,000 P/E cycles is set by the MLC flash, so the 3ME4 is specified for boot, configuration and logging duty rather than write-intensive data capture — workloads with sustained write pressure belong on the 3IE4 (iSLC) or 3SE4 (SLC-based) siblings.

Innodisk products are supplied by QS Compute with B2B pricing, global shipping and short sample lead times for AI data center, edge deployment and industrial integration projects.