SK hynix + SanDisk · first open HBF spec via OCP · up to 512GB (8-Hi/16-Hi) · 0.4–3.0 TB/s · UCIe · 375-layer 4D NAND
Up to 512GB
(8-Hi & 16-Hi NAND stacks)
0.4 – 3.0 TB/s
(3 grades: Grade 1–3)
xPU–HBF host interface
UCIe support
375-layer 4D NAND
2.5× power efficient
OCP technical specification
(first open HBF standard)
SK hynix + SanDisk
Bridges 3D NAND capacity
with HBM-like bandwidth
AI inference systems
memory-hungry LLM workloads
Aug 3–4, 2026
(FMS 2026)
Available
Quote
High Bandwidth Flash (HBF) is a next-generation memory/storage architecture that combines the non-volatility and capacity of 3D NAND with the high bandwidth of HBM-class memory. On August 3–4, 2026, SK hynix and SanDisk released the first open HBF technical specification through the Open Compute Project (OCP) — the industry's first standard of its kind — defining the system interface, electrical characteristics, reliability and packaging guidelines for HBF die stacks, and a software I/O guide for read/write operations.
The specification targets AI inference systems where LLM weight capacity and bandwidth bottlenecks collide. It defines HBF packages up to 512GB using 8-Hi or 16-Hi NAND die stacks, scalable bandwidth across three grades from roughly 0.4 TB/s to 3.0 TB/s, a dedicated xPU–HBF host interface with UCIe support, and a 375-layer 4D NAND claimed to be 2.5× more power efficient than conventional stacks. The consortium began work in February 2026, following the initial SK hynix–SanDisk partnership formed in August 2025 — positioning HBF as an open, multi-vendor path to giving AI accelerators terabytes of near-memory capacity at a fraction of HBM's power budget.
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