Specifications
Vendor
Micron
Memory Type
DDR5 RDIMM (registered ECC)
Capacity
256 GB
Speed
Up to DDR5-9200 (9,200 MT/s)
DRAM Node
1-gamma (1γ)
Packaging
3D stacking (3DS) + TSV
Segment
AI / data-center server memory
Announcement
May 2026 (sampling to server ecosystem enablers)
Claimed Advantage
Over 40% faster than modules in volume production
Overview
Micron's 256 GB DDR5 RDIMM combines leading-edge 1-gamma DRAM with advanced packaging — 3D stacking (3DS) of multiple dies connected by through-silicon vias — to reach up to 9,200 MT/s. That is more than 40% faster than the high-capacity DDR5 modules in volume production today.
High-capacity RDIMMs are a primary procurement target for AI and high-density enterprise platforms, where fitting more memory per DIMM reduces the number of slots and channels needed. Micron began sampling the 256 GB module to key server ecosystem enablers in May 2026.
Key Benefits
256 GB per DIMM - up to DDR5-9200 - 1-gamma DRAM - 3DS + TSV stacking - over 40% faster than volume modules.
Applications
AI and data-center servers, in-memory databases, virtualization hosts and memory-bandwidth-bound enterprise workloads.
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