Specifications

Module Type

DDR5 RDIMM (registered DIMM)

Capacity

512 GB per module — industry first

Data Rate

Up to 9,200 MT/s

Packaging

Vertically stacked DRAM dies interconnected by through-silicon vias (TSV)

DRAM Node

Micron 1γ (1-gamma) DRAM

Server Capacity

Up to 12 TB DDR5 in a single 24-slot dual-socket server

Power Efficiency

More than 60% lower operating power versus comparable capacity configurations

Platform Validation

Actively validating with both AMD and Intel for next-generation server platforms

Demonstrated On

Multiple server platforms

Performance Uplift

Up to 1.4× higher performance than 256 GB DDR5 configurations on memory-bound workloads such as Spark SVM-based analytics

Target Workloads

AI, analytics, in-memory databases, caching platforms and simulation-heavy HPC

Named Platforms

RocksDB and Redis — improved throughput, concurrency and dataset scale

Announced

15 September 2026

Volume Production

Second half of 2027, aligned to customer demand

Predecessor

Micron 256 GB DDR5 RDIMM at 9,200 MT/s (sampling 2026)

Overview

Micron’s 512 GB DDR5 RDIMM is the world’s first 512 GB DDR5 module. Announced on 15 September 2026 and demonstrated on multiple server platforms, it is rated for speeds up to 9,200 MT/s and is being actively validated by both AMD and Intel for their next-generation server platforms.

The capacity is achieved through advanced vertical interconnect packaging: DRAM dies are stacked vertically and interconnected with through-silicon vias, maximising density inside each DRAM package while preserving the signal integrity needed to sustain 9,200 MT/s in a standard DIMM slot. Structurally it borrows the same idea that underpins HBM and applies it to a conventional RDIMM form factor. The DRAM itself is built on Micron’s 1γ (1-gamma) node.

The headline system-level consequence is density without new slots. A dual-socket server with 24 DIMM slots fitted with these modules holds up to 12 TB of DDR5 — capacity that previously required many more sockets, more chassis or a tier of slower storage. Micron reports more than 60% lower operating power for a comparable capacity configuration, which increasingly matters because power delivery, not floorspace, is the binding constraint in AI data halls.

For memory-bound workloads the gains are measurable rather than theoretical. Micron cites up to 1.4× higher performance versus 256 GB DDR5 configurations on Spark Support Vector Machine-based analytics. For in-memory databases and caching layers such as RocksDB and Redis, the benefit shows up as higher throughput, more concurrent sessions and the ability to hold substantially larger datasets entirely in memory — avoiding the latency cliff of spilling to NVMe.

QS Compute sources Micron 512 GB DDR5 RDIMMs alongside the full Micron server memory portfolio. Volume production is scheduled for the second half of 2027, aligned to customer commitments; contact us to register demand and receive configuration guidance for your platform.

Key Benefits

512 GB in a single DIMM slot — the highest DDR5 RDIMM capacity announced to date. Up to 9,200 MT/s keeps bandwidth per core high as core counts climb. 12 TB per 24-slot dual-socket server without adding slots or chassis. Over 60% lower operating power for the same capacity. 1.4× uplift on memory-bound analytics versus 256 GB configurations. AMD and Intel validation in progress de-risks next-generation platform qualification.

Applications

Large language model training and inference hosts; in-memory databases (RocksDB, Redis) and caching tiers; real-time analytics on Spark and similar engines; virtualisation and VDI density consolidation; electronic design automation and simulation-heavy HPC; sovereign and private-cloud AI infrastructure; any workload where dataset size has outgrown existing DIMM-slot capacity.

Request a Quote — MICRON 512GB DDR5 RDIMM — WORLD’S FIRST 512GB MODULE AT 9,200 MT/S

QS Compute — global B2B supply of AI computing hardware, edge AI systems and accelerators. Volume pricing, 15-day sample lead time.

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