Specifications
Module Type
DDR5 RDIMM (registered DIMM)
Capacity
512 GB per module — industry first
Data Rate
Up to 9,200 MT/s
Packaging
Vertically stacked DRAM dies interconnected by through-silicon vias (TSV)
DRAM Node
Micron 1γ (1-gamma) DRAM
Server Capacity
Up to 12 TB DDR5 in a single 24-slot dual-socket server
Power Efficiency
More than 60% lower operating power versus comparable capacity configurations
Platform Validation
Actively validating with both AMD and Intel for next-generation server platforms
Demonstrated On
Multiple server platforms
Performance Uplift
Up to 1.4× higher performance than 256 GB DDR5 configurations on memory-bound workloads such as Spark SVM-based analytics
Target Workloads
AI, analytics, in-memory databases, caching platforms and simulation-heavy HPC
Named Platforms
RocksDB and Redis — improved throughput, concurrency and dataset scale
Announced
15 September 2026
Volume Production
Second half of 2027, aligned to customer demand
Predecessor
Micron 256 GB DDR5 RDIMM at 9,200 MT/s (sampling 2026)
Overview
Micron’s 512 GB DDR5 RDIMM is the world’s first 512 GB DDR5 module. Announced on 15 September 2026 and demonstrated on multiple server platforms, it is rated for speeds up to 9,200 MT/s and is being actively validated by both AMD and Intel for their next-generation server platforms.
The capacity is achieved through advanced vertical interconnect packaging: DRAM dies are stacked vertically and interconnected with through-silicon vias, maximising density inside each DRAM package while preserving the signal integrity needed to sustain 9,200 MT/s in a standard DIMM slot. Structurally it borrows the same idea that underpins HBM and applies it to a conventional RDIMM form factor. The DRAM itself is built on Micron’s 1γ (1-gamma) node.
The headline system-level consequence is density without new slots. A dual-socket server with 24 DIMM slots fitted with these modules holds up to 12 TB of DDR5 — capacity that previously required many more sockets, more chassis or a tier of slower storage. Micron reports more than 60% lower operating power for a comparable capacity configuration, which increasingly matters because power delivery, not floorspace, is the binding constraint in AI data halls.
For memory-bound workloads the gains are measurable rather than theoretical. Micron cites up to 1.4× higher performance versus 256 GB DDR5 configurations on Spark Support Vector Machine-based analytics. For in-memory databases and caching layers such as RocksDB and Redis, the benefit shows up as higher throughput, more concurrent sessions and the ability to hold substantially larger datasets entirely in memory — avoiding the latency cliff of spilling to NVMe.
QS Compute sources Micron 512 GB DDR5 RDIMMs alongside the full Micron server memory portfolio. Volume production is scheduled for the second half of 2027, aligned to customer commitments; contact us to register demand and receive configuration guidance for your platform.
Key Benefits
512 GB in a single DIMM slot — the highest DDR5 RDIMM capacity announced to date. Up to 9,200 MT/s keeps bandwidth per core high as core counts climb. 12 TB per 24-slot dual-socket server without adding slots or chassis. Over 60% lower operating power for the same capacity. 1.4× uplift on memory-bound analytics versus 256 GB configurations. AMD and Intel validation in progress de-risks next-generation platform qualification.
Applications
Large language model training and inference hosts; in-memory databases (RocksDB, Redis) and caching tiers; real-time analytics on Spark and similar engines; virtualisation and VDI density consolidation; electronic design automation and simulation-heavy HPC; sovereign and private-cloud AI infrastructure; any workload where dataset size has outgrown existing DIMM-slot capacity.
Request a Quote — MICRON 512GB DDR5 RDIMM — WORLD’S FIRST 512GB MODULE AT 9,200 MT/S
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