Specifications
Part Number
MTC40F2047S1RC56BR
Capacity
128 GB
Speed
DDR5-5600 (PC5-44800)
Module Type
RDIMM (registered DIMM) with ECC
Rank & Organisation
2Rx4 (dual rank, x4 devices)
CAS Latency
CL46
DRAM Die
32Gb monolithic die, 1-beta (1β) process
Bit Density Gain
More than 45% improved bit density vs 3DS TSV modules
Energy Efficiency
Up to 22% better than competitive 3DS TSV products
Latency
Up to 16% lower than 3DS TSV products
Voltage
1.1 V VDD / VDDQ, 1.8 V VPP
Target Platform
DDR5 server platforms requiring 128 GB per module
Design ID Handling
DID-agnostic server SKU — MPN stays stable across design IDs and revisions
Use Case
AI data centre nodes, virtualisation hosts, in-memory databases
Overview
The Micron MTC40F2047S1RC56BR is a 128 GB DDR5-5600 registered DIMM organised as 2Rx4 with CL46 latency. It is the high-capacity RDIMM counterpart to Micron's MRDIMM family: same capacity ballpark, conventional DDR5 interface, no on-module multiplexing silicon.
The module is built on Micron's 1-beta (1β) process using 32Gb monolithic die rather than 3DS through-silicon-via stacking. That is the source of the headlined advantages over 3DS TSV products — more than 45% better bit density, up to 22% better energy efficiency and up to 16% lower latency, because a monolithic die avoids the TSV interconnect path entirely.
Because this is a DID-agnostic SKU, qualification-sensitive customers get a stable manufacturer part number even as Micron moves between silicon design IDs and revisions. That stability matters in server BOMs where a part-number change triggers a fresh qualification cycle.
Key Benefits
128 GB on a conventional RDIMM — no MRDIMM platform requirement. Monolithic 1-beta die — better efficiency and latency than 3DS TSV stacking. Stable MPN — DID-agnostic ordering for qualification-heavy server builds.
Applications
AI data centre compute nodes, enterprise virtualisation hosts, in-memory database servers, and any DDR5 platform that needs maximum capacity per DIMM slot without MRDIMM support.
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