Specifications
Product
CXMT DDR5 DRAM (ChangXin Memory Technologies)
Process Node
17nm, approximately 90% yield
Demonstrated Speed
9,014 MT/s (24Gx2 48GB kit)
Latency
CL30 confirmed; CL28 preliminary on AMD and Intel platforms
Stated Roadmap
8000 to 9000+ MT/s on AMD platforms
DDR5-6000
Tested kits run DDR5-6000 CL30 in OEM and brand builds
Capacity
Up to 48GB dual-channel kits (24GB modules) and beyond
OEM Adoption
Designed into Dell and HP platforms; motherboard-vendor BIOS validation
Supply
Selling every chip produced; capacity approaching Micron scale
Position
Third-source DRAM alongside Micron, Samsung and SK hynix
Also Shown
DDR5-8000 and LPDDR5X-10667 (2025)
Voltage
JEDEC 1.1V DDR5 standard
Vendor
ChangXin Memory Technologies (CXMT), Hefei, China
Applications
AI PC and consumer/build memory; emerging server and enterprise
Overview
CXMT (ChangXin Memory Technologies) produces DDR5 DRAM on a 17nm node with roughly 90% yield, within a few points of the leading memory makers. Overclocking kits built on CXMT dies have now exceeded 9,000 MT/s, and validated kits run DDR5-6000 CL30 with CL28 in preliminary testing on current AMD and Intel platforms.
The significance for system builders is supply: CXMT provides a genuine third source of DDR5 capacity alongside Micron, Samsung and SK hynix, and is already designed into Dell and HP platforms with motherboard-vendor BIOS validation. As a domestic Chinese producer, it also anchors a large in-country portion of global electronics demand.
Key Benefits
Additional DDR5 capacity as a third source beyond the big three. 90% yield at 17nm signaling mature production. Validated in tier-1 OEM platforms (Dell, HP) with motherboard BIOS support. Competitive performance up to DDR5-6000 CL30 and beyond 9,000 MT/s overclocked.
Applications
AI-capable PCs and workstations, OEM desktop and mobile platforms, and emerging enterprise/server DDR5 where supply diversification matters.
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